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BLV33 Технические параметры
Advanced BLV33 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Advanced | |
| Mounting Type | Stud Mount | |
| Package / Case | DO-203AB, DO-5, Stud | |
| Surface Mount | NO | |
| Supplier Device Package | DO-5 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Package | Bulk | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Emitter- Base Voltage VEBO | 4 V | |
| Pd - Power Dissipation | 132 W | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 15 | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | Through Hole | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| Maximum DC Collector Current | 20 A | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 33 V | |
| Risk Rank | 5.09 | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Part Life Cycle Code | Active | |
| Package Shape | ROUND | |
| Manufacturer Part Number | BLV33 | |
| Transition Frequency-Nom (fT) | 750 MHz | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Style | POST/STUD MOUNT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Description | POST/STUD MOUNT, O-CRPM-F4 | |
| Series | - | |
| Packaging | Tray | |
| ECCN Code | EAR99 | |
| Type | RF Bipolar Power | |
| Subcategory | Transistors | |
| Technology | Standard | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-CRPM-F4 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 224 MHz | |
| Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 70 A | |
| Operating Temperature - Junction | 175°C (Max) | |
| Transistor Application | AMPLIFIER | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Current - Average Rectified (Io) | 70A | |
| Polarity/Channel Type | NPN | |
| Product Type | RF Bipolar Transistors | |
| Transistor Type | Bipolar Power | |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz | |
| Power Dissipation-Max (Abs) | 132 W | |
| Collector Current-Max (IC) | 12.5 A | |
| DC Current Gain-Min (hFE) | 15 | |
| Continuous Collector Current | 12.5 A | |
| Collector-Emitter Voltage-Max | 33 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Reverse Recovery Time (trr) | 50 ns | |
| Product Category | RF Bipolar Transistors |
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