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BLW77 Технические параметры

Advanced  BLW77 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Advanced
Package / Case SOT-123
RoHS Details
Collector- Emitter Voltage VCEO Max 35 V
Emitter- Base Voltage VEBO 3 V
Pd - Power Dissipation 245 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 15
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Screw Mount
Свойство продукта Значение свойства
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
Maximum DC Collector Current 30 A
Packaging Tray
Type RF Bipolar Power
Subcategory Transistors
Technology Si
Operating Frequency 28 MHz
Product Type RF Bipolar Transistors
Transistor Type Bipolar Power
Continuous Collector Current 12 A
Product Category RF Bipolar Transistors
Просмотр сходства
BLW77 brand manufacturers: Advanced, Anli stock, BLW77 reference price.Advanced. BLW77 parameters, BLW77 Datasheet PDF and pin diagram description download.You can use the BLW77 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BLW77 pin diagram and circuit diagram and usage method of function,BLW77 electronics tutorials.You can download from the Anli.