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BLW85 Технические параметры

Advanced  BLW85 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Advanced
Package / Case Axial
Supplier Device Package Axial
Emitter- Base Voltage VEBO 4 V
Pd - Power Dissipation 105 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 10
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Screw Mount
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
Maximum DC Collector Current 22 A
RoHS Details
Collector- Emitter Voltage VCEO Max 16 V
Operating Temperature -55°C ~ 250°C
Series Military, MIL-PRF-39007, RWR80S
Packaging Bulk
Свойство продукта Значение свойства
Size / Dimension 0.094 Dia x 0.406 L (2.39mm x 10.31mm)
Tolerance ±1%
Part Status Active
Number of Terminations 2Terminations
Temperature Coefficient ±20ppm/°C
Type RF Bipolar Power
Resistance 30.9 Ohms
Composition Wirewound
Power (Watts) 2W
Subcategory Transistors
Technology Si
Operating Frequency 175 MHz
Failure Rate M (1%)
Product Type RF Bipolar Transistors
Transistor Type Bipolar Power
Continuous Collector Current 9 A
Features Military, Moisture Resistant
Product Category RF Bipolar Transistors
Height Seated (Max) --
Просмотр сходства
BLW85 brand manufacturers: Advanced, Anli stock, BLW85 reference price.Advanced. BLW85 parameters, BLW85 Datasheet PDF and pin diagram description download.You can use the BLW85 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BLW85 pin diagram and circuit diagram and usage method of function,BLW85 electronics tutorials.You can download from the Anli.