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BLW86 Технические параметры

Advanced  BLW86 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Advanced
Package / Case Axial
Supplier Device Package Axial
Emitter- Base Voltage VEBO 4 V
Pd - Power Dissipation 60 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 5
Unit Weight 1.304431 oz
Minimum Operating Temperature - 65 C
Mounting Styles Screw Mount
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
Maximum DC Collector Current 12 A
RoHS Details
Collector- Emitter Voltage VCEO Max 35 V
Operating Temperature -65°C ~ 175°C
Series Military, MIL-PRF-55182/01, RNC55
Packaging Bulk
Свойство продукта Значение свойства
Size / Dimension 0.094 Dia x 0.250 L (2.39mm x 6.35mm)
Tolerance ±0.5%
Part Status Active
Number of Terminations 2Terminations
Temperature Coefficient ±25ppm/°C
Type RF Bipolar Power
Resistance 1.07 kOhms
Composition Metal Film
Power (Watts) 0.125W, 1/8W
Subcategory Transistors
Technology Si
Operating Frequency 175 MHz
Failure Rate P (0.1%)
Product Type RF Bipolar Transistors
Transistor Type Bipolar Power
Continuous Collector Current 5 A
Features Military, Moisture Resistant, Weldable
Product Category RF Bipolar Transistors
Height Seated (Max) --
Просмотр сходства
BLW86 brand manufacturers: Advanced, Anli stock, BLW86 reference price.Advanced. BLW86 parameters, BLW86 Datasheet PDF and pin diagram description download.You can use the BLW86 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BLW86 pin diagram and circuit diagram and usage method of function,BLW86 electronics tutorials.You can download from the Anli.