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MRF172 Технические параметры
Advanced MRF172 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Advanced | |
| Package / Case | 211-07-3 | |
| Surface Mount | NO | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Id - Continuous Drain Current | 9 A | |
| RoHS | Details | |
| Brand | Advanced Semiconductor, Inc. | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Mounting Styles | SMD/SMT | |
| Minimum Operating Temperature | - 65 C | |
| Vgs - Gate-Source Voltage | 40 V | |
| Maximum Operating Temperature | + 200 C | |
| Transistor Polarity | N-Channel | |
| Pd - Power Dissipation | 220 W | |
| Vgs th - Gate-Source Threshold Voltage | 5 V | |
| Vds - Drain-Source Breakdown Voltage | 65 V | |
| Rds On - Drain-Source Resistance | 1.5 mOhms | |
| Drain Current-Max (ID) | 9 A | |
| Risk Rank | 4.61 | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Part Life Cycle Code | Active | |
| Package Shape | ROUND | |
| Manufacturer Part Number | MRF172 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Style | FLANGE MOUNT | |
| Package Description | FLANGE MOUNT, O-CRFM-F4 | |
| Packaging | Tray | |
| ECCN Code | EAR99 | |
| Type | RF Power MOSFET | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | O-CRFM-F4 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 200 MHz | |
| Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Output Power | 80 W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | RF MOSFET Transistors | |
| Gain | 10 dB | |
| Drain Current-Max (Abs) (ID) | 9 A | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 220 W | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Product Category | RF MOSFET Transistors |
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