Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MRF5176 Технические параметры
Advanced MRF5176 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Advanced | |
| Package / Case | Case244-04 | |
| Surface Mount | NO | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Emitter- Base Voltage VEBO | 4 V | |
| Pd - Power Dissipation | 30 W | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 10 | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | Through Hole | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 33 V | |
| Operating Temperature-Max | 200 °C | |
| Manufacturer Part Number | MRF5176 | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Risk Rank | 5.13 | |
| Package Description | POST/STUD MOUNT, O-CRPM-F4 | |
| Package Style | POST/STUD MOUNT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Packaging | Tray | |
| ECCN Code | EAR99 | |
| Type | RF Bipolar Power | |
| Subcategory | Transistors | |
| Technology | Si | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-CRPM-F4 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 400 MHz | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Product Type | RF Bipolar Transistors | |
| Transistor Type | Bipolar Power | |
| Power Dissipation-Max (Abs) | 30 W | |
| Collector Current-Max (IC) | 2 A | |
| DC Current Gain-Min (hFE) | 10 | |
| Continuous Collector Current | 2 A | |
| Collector-Emitter Voltage-Max | 33 V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 25 pF | |
| Product Category | RF Bipolar Transistors |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ