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MRF555T Технические параметры

Advanced  MRF555T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Advanced
Package / Case 317D-02
Emitter- Base Voltage VEBO 3 V
Pd - Power Dissipation 3 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 50
Unit Weight 0.015104 oz
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles SMD/SMT
Manufacturer Advanced Semiconductor, Inc.
Свойство продукта Значение свойства
Brand Advanced Semiconductor, Inc.
RoHS Details
Collector- Emitter Voltage VCEO Max 16 V
Packaging Tray
Type RF Bipolar Small Signal
Subcategory Transistors
Technology Si
Operating Frequency 470 MHz
Product Type RF Bipolar Transistors
Transistor Type Bipolar
Continuous Collector Current 500 mA
Product Category RF Bipolar Transistors
Просмотр сходства
MRF555T brand manufacturers: Advanced, Anli stock, MRF555T reference price.Advanced. MRF555T parameters, MRF555T Datasheet PDF and pin diagram description download.You can use the MRF555T Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF555T pin diagram and circuit diagram and usage method of function,MRF555T electronics tutorials.You can download from the Anli.