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MRF581 Технические параметры

Advanced  MRF581 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Advanced
Emitter- Base Voltage VEBO 2.5 V
Pd - Power Dissipation 2.5 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 50
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Through Hole
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
Свойство продукта Значение свойства
Maximum DC Collector Current 200 mA
RoHS Details
Collector- Emitter Voltage VCEO Max 18 V
Subcategory Transistors
Technology Si
Operating Frequency 1 GHz
Configuration Single
Product Type RF Bipolar Transistors
Transistor Type Bipolar
Continuous Collector Current 200 mA
Product Category RF Bipolar Transistors
Просмотр сходства
MRF581 brand manufacturers: Advanced, Anli stock, MRF581 reference price.Advanced. MRF581 parameters, MRF581 Datasheet PDF and pin diagram description download.You can use the MRF581 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF581 pin diagram and circuit diagram and usage method of function,MRF581 electronics tutorials.You can download from the Anli.