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MRF5812LF Технические параметры

Advanced  MRF5812LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Advanced
Package / Case SOIC-8
Number of Pins 7Pins
RoHS Compliant
Emitter- Base Voltage VEBO 2.5 V
Pd - Power Dissipation 1.25 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 50
Unit Weight 0.019048 oz
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles SMD/SMT
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
Collector- Emitter Voltage VCEO Max 15 V
Свойство продукта Значение свойства
Packaging Bulk
Series MRF5812LF
Termination IDT
Connector Type Connector, IDC
Type RF Bipolar Small Signal
Gender Male
Subcategory Transistors
Technology Si
Operating Frequency 1 GHz
Wire/Cable Type Flat Flex
Cable Length 203 mm
Product Type RF Bipolar Transistors
Transistor Type Bipolar
Continuous Collector Current 200 mA
Product Category RF Bipolar Transistors
Radiation Hardening No
Просмотр сходства
MRF5812LF brand manufacturers: Advanced, Anli stock, MRF5812LF reference price.Advanced. MRF5812LF parameters, MRF5812LF Datasheet PDF and pin diagram description download.You can use the MRF5812LF Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF5812LF pin diagram and circuit diagram and usage method of function,MRF5812LF electronics tutorials.You can download from the Anli.