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MRF581A Технические параметры

Advanced  MRF581A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Advanced
Package / Case Macro-X
Emitter- Base Voltage VEBO 2.5 V
Pd - Power Dissipation 1.25 W
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 90
Unit Weight 0.003527 oz
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles SMD/SMT
Manufacturer Advanced Semiconductor, Inc.
Свойство продукта Значение свойства
Brand Advanced Semiconductor, Inc.
RoHS Details
Collector- Emitter Voltage VCEO Max 15 V
Packaging Tray
Type RF Bipolar Small Signal
Subcategory Transistors
Technology Si
Operating Frequency 1 GHz
Product Type RF Bipolar Transistors
Transistor Type Bipolar
Continuous Collector Current 200 mA
Product Category RF Bipolar Transistors
Просмотр сходства
MRF581A brand manufacturers: Advanced, Anli stock, MRF581A reference price.Advanced. MRF581A parameters, MRF581A Datasheet PDF and pin diagram description download.You can use the MRF581A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF581A pin diagram and circuit diagram and usage method of function,MRF581A electronics tutorials.You can download from the Anli.