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MRF587 Технические параметры

Advanced  MRF587 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Advanced
Package / Case Case244-04
RoHS Details
Collector- Emitter Voltage VCEO Max 17 V
Emitter- Base Voltage VEBO 2.5 V
Pd - Power Dissipation 5 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 50
Unit Weight 0.429323 oz
Minimum Operating Temperature - 65 C
Свойство продукта Значение свойства
Mounting Styles Through Hole
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
Packaging Tray
Type RF Bipolar Power
Subcategory Transistors
Technology Si
Operating Frequency 500 MHz
Product Type RF Bipolar Transistors
Transistor Type Bipolar Power
Continuous Collector Current 200 mA
Product Category RF Bipolar Transistors
Просмотр сходства
MRF587 brand manufacturers: Advanced, Anli stock, MRF587 reference price.Advanced. MRF587 parameters, MRF587 Datasheet PDF and pin diagram description download.You can use the MRF587 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF587 pin diagram and circuit diagram and usage method of function,MRF587 electronics tutorials.You can download from the Anli.