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TPV8100B Технические параметры
Advanced TPV8100B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Advanced | |
| Package / Case | Axial | |
| Supplier Device Package | Axial | |
| Emitter- Base Voltage VEBO | 4 V | |
| Pd - Power Dissipation | 215 W | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 30 | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | Screw Mount | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 30 V | |
| Operating Temperature | -65°C ~ 175°C | |
| Series | Military, MIL-PRF-55182/01, RNC55 | |
| Packaging | Bulk | |
| Size / Dimension | 0.094 Dia x 0.250 L (2.39mm x 6.35mm) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Tolerance | ±0.5% | |
| Part Status | Active | |
| Number of Terminations | 2Terminations | |
| Temperature Coefficient | ±25ppm/°C | |
| Type | RF Bipolar Power | |
| Resistance | 14.7 kOhms | |
| Composition | Metal Film | |
| Power (Watts) | 0.125W, 1/8W | |
| Subcategory | Transistors | |
| Technology | Si | |
| Operating Frequency | 860 MHz | |
| Failure Rate | R (0.01%) | |
| Product Type | RF Bipolar Transistors | |
| Transistor Type | Bipolar Power | |
| Continuous Collector Current | 12 A | |
| Features | Military, Moisture Resistant, Weldable | |
| Product Category | RF Bipolar Transistors | |
| Height Seated (Max) | -- |
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