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ALD1107PBL Технические параметры
Advanced Linear Devices Inc. ALD1107PBL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 14-DIP (0.300, 7.62mm) | |
| Number of Pins | 14Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 4 Elements | |
| Published | 2012 | |
| Operating Temperature | 0°C~70°C TJ | |
| Packaging | Tube | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 14Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 500mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Reach Compliance Code | unknown | |
| Configuration | COMMON SUBSTRATE, 4 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500mW | |
| FET Type | 4 P-Channel, Matched Pair | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1800 Ω @ 5V | |
| Vgs(th) (Max) @ Id | 1V @ 1μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 5V | |
| Drain to Source Voltage (Vdss) | 10.6V | |
| Continuous Drain Current (ID) | 2mA | |
| Gate to Source Voltage (Vgs) | -13.2V | |
| Drain to Source Breakdown Voltage | -12V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant |
ALD1107PBL Документы
- DatasheetsALD1107,117
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