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Advanced Linear Devices Inc. ALD110900APAL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ||
Factory Lead Time | 8 Weeks | |
Package / Case | 8-DIP (0.300, 7.62mm) | |
Mounting Type | Through Hole | |
Mount | Through Hole | |
Number of Pins | 8Pins | |
Supplier Device Package | 8-PDIP | |
Turn Off Delay Time | 10 ns | |
Published | 2005 | |
Series | EPAD®, Zero Threshold™ | |
Packaging | Tube | |
Operating Temperature | 0°C~70°C TJ | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Max Operating Temperature | 70°C | |
Min Operating Temperature | 0°C |
Свойство продукта | Значение свойства | |
---|---|---|
Max Power Dissipation | 500mW | |
Element Configuration | Dual | |
Power Dissipation | 500mW | |
Power - Max | 500mW | |
FET Type | 2 N-Channel (Dual) Matched Pair | |
Rds On (Max) @ Id, Vgs | 500Ohm @ 4V | |
Vgs(th) (Max) @ Id | 10mV @ 1μA | |
Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V | |
Drain to Source Voltage (Vdss) | 10.6V | |
Continuous Drain Current (ID) | 12mA | |
Gate to Source Voltage (Vgs) | 10.6V | |
Drain to Source Breakdown Voltage | 10V | |
Input Capacitance | 2.5pF | |
FET Feature | Standard | |
Drain to Source Resistance | 500Ohm | |
Rds On Max | 500 Ω | |
RoHS Status | ROHS3 Compliant |