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Advanced Linear Devices Inc. ALD1115PAL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ||
Factory Lead Time | 8 Weeks | |
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | 8-DIP (0.300, 7.62mm) | |
Number of Pins | 8Pins | |
Transistor Element Material | SILICON | |
Number of Elements | 2 Elements | |
Operating Temperature | 0°C~70°C TJ | |
Packaging | Tube | |
Published | 2006 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Max Power Dissipation | 500mW |
Свойство продукта | Значение свойства | |
---|---|---|
Reach Compliance Code | unknown | |
Element Configuration | Dual | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 500mW | |
FET Type | N and P-Channel Complementary | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 1800 Ω @ 5V | |
Vgs(th) (Max) @ Id | 1V @ 1μA | |
Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 5V | |
Drain to Source Voltage (Vdss) | 10.6V | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Continuous Drain Current (ID) | 2mA | |
Gate to Source Voltage (Vgs) | 13.2V | |
Drain-source On Resistance-Max | 500Ohm | |
Drain to Source Breakdown Voltage | -12V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Standard | |
RoHS Status | ROHS3 Compliant |