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ALD1115PAL Технические параметры

Advanced Linear Devices Inc.  ALD1115PAL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature 0°C~70°C TJ
Packaging Tube
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 500mW
Свойство продукта Значение свойства
Reach Compliance Code unknown
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
FET Type N and P-Channel Complementary
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1800 Ω @ 5V
Vgs(th) (Max) @ Id 1V @ 1μA
Input Capacitance (Ciss) (Max) @ Vds 3pF @ 5V
Drain to Source Voltage (Vdss) 10.6V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 2mA
Gate to Source Voltage (Vgs) 13.2V
Drain-source On Resistance-Max 500Ohm
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant

ALD1115PAL Документы

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