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ALD111933PAL Технические параметры
Advanced Linear Devices Inc. ALD111933PAL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Package / Case | 8-DIP (0.300, 7.62mm) | |
| Mounting Type | Through Hole | |
| Mount | Through Hole | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Turn Off Delay Time | 10 ns | |
| Number of Elements | 2 Elements | |
| Published | 2006 | |
| Series | EPAD® | |
| Packaging | Tube | |
| Operating Temperature | 0°C~70°C TJ | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Max Power Dissipation | 500mW | |
| Reach Compliance Code | unknown | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500mW | |
| FET Type | 2 N-Channel (Dual) Matched Pair | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 500 Ω @ 5.9V | |
| Vgs(th) (Max) @ Id | 3.35V @ 1μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V | |
| Continuous Drain Current (ID) | 6.9mA | |
| Gate to Source Voltage (Vgs) | 10.6V | |
| Drain to Source Breakdown Voltage | 10V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant |
ALD111933PAL Документы
- DatasheetsALD111933
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