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AP9997GH Технические параметры
Advanced Power Electronics Corp AP9997GH technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Drain Current-Max (ID) | 11 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252 | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| DS Breakdown Voltage-Min | 100 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
AP9997GH Документы
- Datasheetsf0be1711984af3f42f91ed70a34c6fe5.pdf
Индекс :
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