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Advanced Power Technology APT10050JN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | ISOTOP-4 | |
| Drain Current-Max (ID) | 20.5 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Max (toff) | 105 ns | |
| Turn-on Time-Max (ton) | 60 ns | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | UPPER |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Reference Standard | UL RECOGNIZED | |
| JESD-30 Code | R-PUFM-X4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| Pulsed Drain Current-Max (IDM) | 82 A | |
| DS Breakdown Voltage-Min | 1000 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 520 W | |
| Feedback Cap-Max (Crss) | 350 pF | |
| Power Dissipation Ambient-Max | 520 W |