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APT50GF60LRD Технические параметры
Advanced Power Technology APT50GF60LRD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Nom (toff) | 460 ns | |
| Turn-on Time-Nom (ton) | 120 ns | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | TIN LEAD | |
| Additional Feature | FAST SWITCHING | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Case Connection | COLLECTOR | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-264AA | |
| Power Dissipation-Max (Abs) | 300 W | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Gate-Emitter Thr Voltage-Max | 6.5 V |
Индекс :
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