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MMBR951MLT1 Технические параметры

Advanced Power Technology  MMBR951MLT1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description SMALL OUTLINE, R-PDSO-G3
Number of Elements 1 Element
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Transition Frequency-Nom (fT) 8000 MHz
JESD-609 Code e0
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature LOW NOISE
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.322 W
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 50
Collector-Emitter Voltage-Max 10 V
Highest Frequency Band ULTRA HIGH FREQUENCY BAND

MMBR951MLT1 Документы

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