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Allegro MicroSystems 2SD2560 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mount | Through Hole | |
| EU RoHS | Compliant with Exemption | |
| ECCN (US) | EAR99 | |
| HTS | 8542.39.00.01 | |
| Automotive | No | |
| PPAP | No | |
| Number of Elements per Chip | 1 | |
| Maximum Collector-Emitter Voltage (V) | 150 | |
| Maximum Collector Base Voltage (V) | 150 | |
| Maximum Emitter Base Voltage (V) | 5 | |
| Maximum Base Emitter Saturation Voltage (V) | 3@10mA@10A | |
| Maximum Continuous DC Collector Current (A) | 15 | |
| Maximum Collector Cut-Off Current (uA) | 100 | |
| Typical Current Gain Bandwidth (MHz) | 70 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 2.5@10mA@10A | |
| Maximum Power Dissipation (mW) | 130000 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Mounting | Through Hole | |
| Package Height | 17.9 | |
| Package Width | 4.8 | |
| Package Length | 15.6 | |
| PCB changed | 3 | |
| Tab | Tab | |
| Standard Package Name | TO-3P | |
| Supplier Package | TO-3P | |
| Lead Shape | Through Hole | |
| Collector-Emitter Breakdown Voltage | 150 V | |
| RoHS | Compliant | |
| Part Status | Active | |
| Type | NPN | |
| Max Power Dissipation | 130 W | |
| Pin Count | 3 | |
| Configuration | Single | |
| Collector Emitter Voltage (VCEO) | 2.5 V | |
| Max Collector Current | 15 A | |
| Transition Frequency | 70 MHz | |
| Lead Free | Lead Free |