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- AS4C64M32MD2A-25BINTR
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AS4C64M32MD2A-25BINTR Технические параметры
Alliance Memory AS4C64M32MD2A-25BINTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | Alliance Memory | |
| Factory Lead Time | 8 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 134-VFBGA | |
| Surface Mount | YES | |
| Supplier Device Package | 134-FBGA (10x11.5) | |
| Number of Terminals | 134Terminals | |
| Maximum Clock Rate | 400 MHz | |
| Supplier Package | FBGA | |
| Number of I/O Lines | 32 BitI/O Line | |
| Mounting | Surface Mount | |
| Package | Tape & Reel (TR) | |
| Mfr | Alliance Memory, Inc. | |
| Product Status | Active | |
| Memory Types | Volatile | |
| Moisture Sensitive | Yes | |
| Maximum Clock Frequency | 400 MHz | |
| Maximum Operating Temperature | + 85 C | |
| Supply Voltage-Max | 1.95 V | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 2000 | |
| Supply Voltage-Min | 1.14 V | |
| Mounting Styles | SMD/SMT | |
| Manufacturer | Alliance Memory | |
| Brand | Alliance Memory | |
| RoHS | Details | |
| Package Description | VFBGA, | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Number of Words Code | 64000000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -40 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 85 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | AS4C64M32MD2A-25BINTR | |
| Number of Words | 67108864 wordsWord | |
| Supply Voltage-Nom (Vsup) | 1.2 V | |
| Package Code | VFBGA | |
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALLIANCE MEMORY INC | |
| Risk Rank | 5.7 | |
| Usage Level | Industrial grade | |
| Operating Temperature | -40 to 85 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Packaging | Reel | |
| Type | Mobile LPDDR2 SDRAM | |
| Additional Feature | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | |
| Subcategory | Memory & Data Storage | |
| Technology | SDRAM - Mobile LPDDR2 | |
| Voltage - Supply | 1.14V ~ 1.3V, 1.7V ~ 1.95V | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.65 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 134 | |
| JESD-30 Code | R-PBGA-B134 | |
| Operating Supply Voltage | 3.3 V | |
| Supply Voltage-Max (Vsup) | 1.3 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 1.14 V | |
| Memory Size | 2Gbit | |
| Number of Ports | 1Port | |
| Operating Mode | SYNCHRONOUS | |
| Clock Frequency | 400 MHz | |
| Supply Current-Max | 65 mA | |
| Access Time | 5.5 ns | |
| Memory Format | DRAM | |
| Memory Interface | HSUL_12 | |
| Data Bus Width | 32 Bit | |
| Organization | 64M x 32 | |
| Seated Height-Max | 1 mm | |
| Memory Width | 32 | |
| Write Cycle Time - Word, Page | 15ns | |
| Address Bus Width | 14 Bit | |
| Product Type | DRAM | |
| Density | 2 Gbit | |
| Memory Density | 2147483648 bit | |
| Screening Level | Industrial | |
| Memory IC Type | DDR DRAM | |
| Access Mode | MULTI BANK PAGE BURST | |
| Self Refresh | YES | |
| Product Category | DRAM | |
| Number of Banks | 8Banks | |
| Memory Organization | 64M x 32 | |
| Width | 10 mm | |
| Length | 11.5 mm |
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