Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
AO6604 Технические параметры
Alpha & Omega Semiconductor Inc. AO6604 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 18 Weeks | |
| Package / Case | SC-74, SOT-457 | |
| Mounting Type | Surface Mount | |
| Mount | Surface Mount | |
| Number of Pins | 6Pins | |
| Number of Elements | 2 Elements | |
| Current - Continuous Drain (Id) @ 25℃ | 3.4A 2.5A | |
| Published | 2010 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 1.1W | |
| Operating Mode | ENHANCEMENT MODE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 1.1W | |
| FET Type | N and P-Channel Complementary | |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 3.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 2.5A | |
| Drain Current-Max (Abs) (ID) | 3.4A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate, 4.5V Drive | |
| RoHS Status | ROHS3 Compliant | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ