Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
AOTF10B65M2 Технические параметры
Alpha & Omega Semiconductor Inc. AOTF10B65M2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 18 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220 | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Current-Collector (Ic) (Max) | 20A | |
| Test Conditions | 400V, 10A, 30Ohm, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | Alpha IGBT™ | |
| Published | 2009 | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 30W | |
| Input Type | Standard | |
| Power - Max | 30W | |
| Collector Emitter Voltage (VCEO) | 2V | |
| Max Collector Current | 20A | |
| Reverse Recovery Time | 262 ns | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 10A | |
| Gate Charge | 24nC | |
| Current - Collector Pulsed (Icm) | 30A | |
| Td (on/off) @ 25°C | 12ns/91ns | |
| Switching Energy | 180μJ (on), 130μJ (off) | |
| RoHS Status | ROHS3 Compliant |
AOTF10B65M2 Документы
- PCN Assembly/OriginMult Dev Assem/Test Chg 19/Jul/2018
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ