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AOTF9N50 Технические параметры
Alpha & Omega Semiconductor Inc. AOTF9N50 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 18 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 9A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 38.5W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2009 | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 38.5W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 850m Ω @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1042pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V | |
| Drain to Source Voltage (Vdss) | 500V | |
| Vgs (Max) | ±30V | |
| Continuous Drain Current (ID) | 9A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain Current-Max (Abs) (ID) | 9A | |
| RoHS Status | ROHS3 Compliant |
AOTF9N50 Документы
- PCN Assembly/OriginMult Dev Assem/Test Chg 19/Jul/2018
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