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JANTX2N6287 Технические параметры
American Microsemiconductor, Inc. JANTX2N6287 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) | |
| Factory Lead Time | 20 Weeks | |
| Contact Plating | Lead, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-204AA, TO-3 | |
| Supplier Device Package | TO-204AA (TO-3) | |
| Collector-Emitter Breakdown Voltage | 100V | |
| Current-Collector (Ic) (Max) | 20A | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TJ | |
| Published | 2002 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 175°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -65°C | |
| Max Power Dissipation | 175W | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Power - Max | 175W | |
| Transistor Type | PNP - Darlington | |
| Collector Emitter Voltage (VCEO) | 100V | |
| Max Collector Current | 20A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1500 @ 1A 3V | |
| Current - Collector Cutoff (Max) | 1mA | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A | |
| Voltage - Collector Emitter Breakdown (Max) | 100V | |
| Collector Base Voltage (VCBO) | 100V | |
| Emitter Base Voltage (VEBO) | 7V | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
Индекс :
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