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2N6491G Технические параметры

AMI Semiconductor  2N6491G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка AMI Semiconductor
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 15A
Other Names 2N6491GOS
Operating Temperature -65°C ~ 150°C (TJ)
Series -
Свойство продукта Значение свойства
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N6491
Power - Max 1.8W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A
Voltage - Collector Emitter Breakdown (Max) 80V
Frequency - Transition 5MHz
Просмотр сходства
2N6491G brand manufacturers: AMI Semiconductor, Anli stock, 2N6491G reference price.AMI Semiconductor. 2N6491G parameters, 2N6491G Datasheet PDF and pin diagram description download.You can use the 2N6491G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N6491G pin diagram and circuit diagram and usage method of function,2N6491G electronics tutorials.You can download from the Anli.