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2SC5569-TD-E Технические параметры

AMI Semiconductor  2SC5569-TD-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89/PCP-1
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 7A
Other Names 2SC5569-TD-E-ND 2SC5569-TD-EOSTR
Operating Temperature 150°C (TJ)
Series -
Свойство продукта Значение свойства
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.3W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 240mV @ 175mA, 3.5A
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 330MHz
Просмотр сходства
2SC5569-TD-E brand manufacturers: AMI Semiconductor, Anli stock, 2SC5569-TD-E reference price.AMI Semiconductor. 2SC5569-TD-E parameters, 2SC5569-TD-E Datasheet PDF and pin diagram description download.You can use the 2SC5569-TD-E Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SC5569-TD-E pin diagram and circuit diagram and usage method of function,2SC5569-TD-E electronics tutorials.You can download from the Anli.