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BCP53T1G Технические параметры
AMI Semiconductor BCP53T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | AMI Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Supplier Device Package | SOT-223 | |
| Voltage, Rating | 25 V | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current-Collector (Ic) (Max) | 1.5A | |
| Other Names | BCP53T1GOSTR | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Tolerance | 0.25 % | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Temperature Coefficient | 25 ppm/°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Resistance | 18 Ω | |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Thin Film | |
| Power Rating | 63 mW | |
| Base Part Number | BCP53 | |
| Power - Max | 1.5W | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Frequency - Transition | 50MHz | |
| Height | 350 µm |
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