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BUL45G Технические параметры

AMI Semiconductor  BUL45G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка AMI Semiconductor
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 5A
Other Names BUL45GOS
Operating Temperature -65°C ~ 150°C (TJ)
Series SWITCHMODE™
Свойство продукта Значение свойства
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BUL45
Power - Max 75W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 300mA, 5V
Current - Collector Cutoff (Max) 100µA
Vce Saturation (Max) @ Ib, Ic 400mV @ 400mA, 2A
Voltage - Collector Emitter Breakdown (Max) 400V
Frequency - Transition 12MHz
BUL45G brand manufacturers: AMI Semiconductor, Anli stock, BUL45G reference price.AMI Semiconductor. BUL45G parameters, BUL45G Datasheet PDF and pin diagram description download.You can use the BUL45G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BUL45G pin diagram and circuit diagram and usage method of function,BUL45G electronics tutorials.You can download from the Anli.