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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- DTA113EM3T5G
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DTA113EM3T5G Технические параметры
AMI Semiconductor DTA113EM3T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | AMI Semiconductor | |
| Contact Plating | Gold | |
| Mount | Bulkhead, Front Side Nut, Panel | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Number of Pins | 8Pins | |
| Supplier Device Package | SOT-723 | |
| RoHS | Compliant | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current-Collector (Ic) (Max) | 100mA | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Termination | Crimp |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Connector Type | Receptacle | |
| Number of Positions | 8Positions | |
| Max Operating Temperature | 200 °C | |
| Min Operating Temperature | -65 °C | |
| Fastening Type | Threaded | |
| Power - Max | 260mW | |
| Transistor Type | PNP - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 1 kOhms | |
| Resistor - Emitter Base (R2) | 1 kOhms | |
| Ratings | Environment Resistant |
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