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FDBL86363-F085 Технические параметры
AMI Semiconductor FDBL86363-F085 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | AMI Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerSFN | |
| Supplier Device Package | 8-PSOF | |
| RoHS | Non-Compliant | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 240A (Tc) | |
| Other Names | FDBL86363-F085TR FDBL86363_F085 FDBL86363_F085TR FDBL86363_F085TR-ND | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 357W (Tj) | |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | Automotive, AEC-Q101, PowerTrench® | |
| Packaging | Tape & Reel (TR) | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Technology | MOSFET (Metal Oxide) | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 2 mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 10000pF @ 40V | |
| Gate Charge (Qg) (Max) @ Vgs | 169nC @ 10V | |
| Drain to Source Voltage (Vdss) | 80V | |
| Vgs (Max) | ±20V | |
| FET Feature | - |
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