Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
FDC6302P Технические параметры
AMI Semiconductor FDC6302P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | AMI Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | SuperSOT™-6 | |
| Material | PO, Polyolefin | |
| RoHS | Compliant | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 120mA | |
| Other Names | FDC6302P-ND FDC6302PTR | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - | |
| Packaging | Tape & Reel (TR) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 125 °C | |
| Min Operating Temperature | -55 °C | |
| Color | Black | |
| Power - Max | 700mW | |
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 200mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 11pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.31nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 25V | |
| FET Feature | Logic Level Gate | |
| Length | 30.48 m |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ