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FDP2532 Технические параметры
AMI Semiconductor FDP2532 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | AMI Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220-3 | |
| Voltage, Rating | 150 V | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 8A (Ta), 79A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Power Dissipation (Max) | 310W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | PowerTrench® | |
| Packaging | Tube | |
| Tolerance | 1 % | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Temperature Coefficient | 50 ppm/°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Resistance | 383 kΩ | |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Thin Film | |
| Power Rating | 250 mW | |
| Technology | MOSFET (Metal Oxide) | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 33A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5870pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V | |
| Drain to Source Voltage (Vdss) | 150V | |
| Vgs (Max) | ±20V | |
| FET Feature | - | |
| Height | 650 µm |
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