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FJN4314RBU Технические параметры

AMI Semiconductor  FJN4314RBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка AMI Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 100mA
Series -
Packaging Bulk
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Power - Max 300mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Просмотр сходства
FJN4314RBU brand manufacturers: AMI Semiconductor, Anli stock, FJN4314RBU reference price.AMI Semiconductor. FJN4314RBU parameters, FJN4314RBU Datasheet PDF and pin diagram description download.You can use the FJN4314RBU Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FJN4314RBU pin diagram and circuit diagram and usage method of function,FJN4314RBU electronics tutorials.You can download from the Anli.