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FJNS3210RTA Технические параметры

AMI Semiconductor  FJNS3210RTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка AMI Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Supplier Device Package TO-92S
RoHS Non-Compliant
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 100mA
Series -
Packaging Tape & Box (TB)
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 300mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 40V
Frequency - Transition 250MHz
Resistor - Base (R1) 10 kOhms
Просмотр сходства
FJNS3210RTA brand manufacturers: AMI Semiconductor, Anli stock, FJNS3210RTA reference price.AMI Semiconductor. FJNS3210RTA parameters, FJNS3210RTA Datasheet PDF and pin diagram description download.You can use the FJNS3210RTA Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FJNS3210RTA pin diagram and circuit diagram and usage method of function,FJNS3210RTA electronics tutorials.You can download from the Anli.