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FJV4107RMTF Технические параметры

AMI Semiconductor  FJV4107RMTF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 100mA
Series -
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gender Female
Свойство продукта Значение свойства
Contact Style Socket
Power - Max 200mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Просмотр сходства
FJV4107RMTF brand manufacturers: AMI Semiconductor, Anli stock, FJV4107RMTF reference price.AMI Semiconductor. FJV4107RMTF parameters, FJV4107RMTF Datasheet PDF and pin diagram description download.You can use the FJV4107RMTF Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FJV4107RMTF pin diagram and circuit diagram and usage method of function,FJV4107RMTF electronics tutorials.You can download from the Anli.