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FQB2N60TM Технические параметры

AMI Semiconductor  FQB2N60TM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263AB)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃ 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 3.13W (Ta), 64W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Series QFET®
Свойство продукта Значение свойства
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
FET Feature -
Просмотр сходства
FQB2N60TM brand manufacturers: AMI Semiconductor, Anli stock, FQB2N60TM reference price.AMI Semiconductor. FQB2N60TM parameters, FQB2N60TM Datasheet PDF and pin diagram description download.You can use the FQB2N60TM Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find FQB2N60TM pin diagram and circuit diagram and usage method of function,FQB2N60TM electronics tutorials.You can download from the Anli.