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FQI2N30TU Технические параметры

AMI Semiconductor  FQI2N30TU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка AMI Semiconductor
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃ 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 3.13W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Series QFET®
Свойство продукта Значение свойства
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7 Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Drain to Source Voltage (Vdss) 300V
Vgs (Max) ±30V
FET Feature -
Просмотр сходства
FQI2N30TU brand manufacturers: AMI Semiconductor, Anli stock, FQI2N30TU reference price.AMI Semiconductor. FQI2N30TU parameters, FQI2N30TU Datasheet PDF and pin diagram description download.You can use the FQI2N30TU Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find FQI2N30TU pin diagram and circuit diagram and usage method of function,FQI2N30TU electronics tutorials.You can download from the Anli.