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KSC1675RBU Технические параметры

AMI Semiconductor  KSC1675RBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка AMI Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 50mA
Operating Temperature -
Series -
Packaging Bulk
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC1675
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition 300MHz
Просмотр сходства
KSC1675RBU brand manufacturers: AMI Semiconductor, Anli stock, KSC1675RBU reference price.AMI Semiconductor. KSC1675RBU parameters, KSC1675RBU Datasheet PDF and pin diagram description download.You can use the KSC1675RBU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSC1675RBU pin diagram and circuit diagram and usage method of function,KSC1675RBU electronics tutorials.You can download from the Anli.