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KSD1408GTU Технические параметры

AMI Semiconductor  KSD1408GTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка AMI Semiconductor
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 4A
Operating Temperature 150°C (TJ)
Series -
Свойство продукта Значение свойства
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 5V
Current - Collector Cutoff (Max) 30µA (ICBO)
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 80V
Frequency - Transition 8MHz
Просмотр сходства
KSD1408GTU brand manufacturers: AMI Semiconductor, Anli stock, KSD1408GTU reference price.AMI Semiconductor. KSD1408GTU parameters, KSD1408GTU Datasheet PDF and pin diagram description download.You can use the KSD1408GTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD1408GTU pin diagram and circuit diagram and usage method of function,KSD1408GTU electronics tutorials.You can download from the Anli.