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MJD253-1G Технические параметры

AMI Semiconductor  MJD253-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка AMI Semiconductor
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 4A
Other Names MJD253-1G-ND MJD253-1GOS MJD2531G
Operating Temperature -65°C ~ 150°C (TJ)
Series -
Свойство продукта Значение свойства
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number MJD253
Power - Max 1.4W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 100V
Frequency - Transition 40MHz
Просмотр сходства
MJD253-1G brand manufacturers: AMI Semiconductor, Anli stock, MJD253-1G reference price.AMI Semiconductor. MJD253-1G parameters, MJD253-1G Datasheet PDF and pin diagram description download.You can use the MJD253-1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MJD253-1G pin diagram and circuit diagram and usage method of function,MJD253-1G electronics tutorials.You can download from the Anli.