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MJD2955G Технические параметры

AMI Semiconductor  MJD2955G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 10A
Other Names MJD2955G-ND MJD2955GOS
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Свойство продукта Значение свойства
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number MJD2955
Power - Max 1.75W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V
Current - Collector Cutoff (Max) 50µA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition 2MHz
Просмотр сходства
MJD2955G brand manufacturers: AMI Semiconductor, Anli stock, MJD2955G reference price.AMI Semiconductor. MJD2955G parameters, MJD2955G Datasheet PDF and pin diagram description download.You can use the MJD2955G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MJD2955G pin diagram and circuit diagram and usage method of function,MJD2955G electronics tutorials.You can download from the Anli.