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MMUN2112LT1G Технические параметры

AMI Semiconductor  MMUN2112LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 100mA
Other Names MMUN2112LT1G-ND MMUN2112LT1GOSTR
Series -
Packaging Tape & Reel (TR)
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number MMUN21**L
Power - Max 246mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
Просмотр сходства
MMUN2112LT1G brand manufacturers: AMI Semiconductor, Anli stock, MMUN2112LT1G reference price.AMI Semiconductor. MMUN2112LT1G parameters, MMUN2112LT1G Datasheet PDF and pin diagram description download.You can use the MMUN2112LT1G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find MMUN2112LT1G pin diagram and circuit diagram and usage method of function,MMUN2112LT1G electronics tutorials.You can download from the Anli.