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MUN2211JT1 Технические параметры

AMI Semiconductor  MUN2211JT1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Current-Collector (Ic) (Max) 100mA
Series -
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number MUN2211
Power - Max 230mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
Просмотр сходства
MUN2211JT1 brand manufacturers: AMI Semiconductor, Anli stock, MUN2211JT1 reference price.AMI Semiconductor. MUN2211JT1 parameters, MUN2211JT1 Datasheet PDF and pin diagram description download.You can use the MUN2211JT1 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find MUN2211JT1 pin diagram and circuit diagram and usage method of function,MUN2211JT1 electronics tutorials.You can download from the Anli.