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MUN5137T1 Технические параметры

AMI Semiconductor  MUN5137T1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Current-Collector (Ic) (Max) 100mA
Other Names MUN5137T1OS
Series -
Packaging Tape & Reel (TR)
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number MUN51**T
Power - Max 202mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 22 kOhms
Просмотр сходства
MUN5137T1 brand manufacturers: AMI Semiconductor, Anli stock, MUN5137T1 reference price.AMI Semiconductor. MUN5137T1 parameters, MUN5137T1 Datasheet PDF and pin diagram description download.You can use the MUN5137T1 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find MUN5137T1 pin diagram and circuit diagram and usage method of function,MUN5137T1 electronics tutorials.You can download from the Anli.