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NSV40200UW6T1G Технические параметры

AMI Semiconductor  NSV40200UW6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Supplier Device Package 6-WDFN (2x2)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 2A
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Свойство продукта Значение свойства
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 875mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1A, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 2A
Voltage - Collector Emitter Breakdown (Max) 40V
Frequency - Transition 140MHz
Просмотр сходства
NSV40200UW6T1G brand manufacturers: AMI Semiconductor, Anli stock, NSV40200UW6T1G reference price.AMI Semiconductor. NSV40200UW6T1G parameters, NSV40200UW6T1G Datasheet PDF and pin diagram description download.You can use the NSV40200UW6T1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NSV40200UW6T1G pin diagram and circuit diagram and usage method of function,NSV40200UW6T1G electronics tutorials.You can download from the Anli.