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NSVDTA113EM3T5G Технические параметры

AMI Semiconductor  NSVDTA113EM3T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package SOT-723
RoHS Non-Compliant
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 100mA
Series -
Packaging Tape & Reel (TR)
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 260mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
Просмотр сходства
NSVDTA113EM3T5G brand manufacturers: AMI Semiconductor, Anli stock, NSVDTA113EM3T5G reference price.AMI Semiconductor. NSVDTA113EM3T5G parameters, NSVDTA113EM3T5G Datasheet PDF and pin diagram description download.You can use the NSVDTA113EM3T5G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSVDTA113EM3T5G pin diagram and circuit diagram and usage method of function,NSVDTA113EM3T5G electronics tutorials.You can download from the Anli.