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NSVDTC123JM3T5G Технические параметры

AMI Semiconductor  NSVDTC123JM3T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package SOT-723
Voltage, Rating 50 V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 100mA
Series Automotive, AEC-Q101
Tolerance 0.5 %
Temperature Coefficient 25 ppm/°C
Resistance 4.64 Ω
Max Operating Temperature 155 °C
Свойство продукта Значение свойства
Min Operating Temperature -55 °C
Composition Thin Film
Power Rating 100 mW
Power - Max 260mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Height 550 µm
Просмотр сходства
NSVDTC123JM3T5G brand manufacturers: AMI Semiconductor, Anli stock, NSVDTC123JM3T5G reference price.AMI Semiconductor. NSVDTC123JM3T5G parameters, NSVDTC123JM3T5G Datasheet PDF and pin diagram description download.You can use the NSVDTC123JM3T5G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NSVDTC123JM3T5G pin diagram and circuit diagram and usage method of function,NSVDTC123JM3T5G electronics tutorials.You can download from the Anli.