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SBT80-10Y-E Технические параметры

AMI Semiconductor  SBT80-10Y-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка AMI Semiconductor
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package SMP-FD
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Average Rectified (Io) (per Diode) 8A
Series -
Packaging Bulk
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number SBT80-10
Speed Fast Recovery = 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 100µA @ 50V
Voltage - Forward (Vf) (Max) @ If 800mV @ 3A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max) 100V
Diode Configuration 1 Pair Common Cathode
Просмотр сходства
SBT80-10Y-E brand manufacturers: AMI Semiconductor, Anli stock, SBT80-10Y-E reference price.AMI Semiconductor. SBT80-10Y-E parameters, SBT80-10Y-E Datasheet PDF and pin diagram description download.You can use the SBT80-10Y-E Diodes - Rectifiers - Arrays, DSP Datesheet PDF, find SBT80-10Y-E pin diagram and circuit diagram and usage method of function,SBT80-10Y-E electronics tutorials.You can download from the Anli.